Vishay Siliconix SIZF360DT-T1-GE3

Product attributes

Attribute value

Manufacturer:

Vishay Siliconix

Series:

TrenchFET® Gen IV

Package/Case:

6-PowerPair™

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

2 N-Channel (Dual), Schottky

FET Feature:

-

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc)

Rds On (Max) @ Id, Vgs:

4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

22nC @ 10V, 62nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

1100pF @ 15V, 3150pF @ 15V

Power - Max:

3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

6-PowerPair™