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Infineon Technologies SIGC12T60NCX7SA1

Part No.:
SIGC12T60NCX7SA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
Die
Description:
IGBT 3 CHIP 600V WAFER
Quantity:

Unit Price:$0

Ext Price:$0

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SIGC12T60NCX7SA1 Information

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Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
Die
Packaging:
Bulk
Product Status:
Obsolete
IGBT Type:
NPT
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
10 A
Current - Collector Pulsed (Icm):
30 A
Vce(on) (Max) @ Vge, Ic:
2.5V @ 15V, 10A
Power - Max:
-
Switching Energy:
-
Input Type:
Standard
Gate Charge:
-
Td (on/off) @ 25°C:
21ns/110ns
Test Condition:
300V, 10A, 27Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
Die
Image SIGC12T60NCX7SA1
Part Number SIGC12T60NCX7SA1
Manufacturer Infineon Technologies
Series -
Package/Case Die
Packaging Bulk
Product Status Obsolete
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 10 A
Current - Collector Pulsed (Icm) 30 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 10A
Power - Max -
Switching Energy -
Input Type Standard
Gate Charge -
Td (on/off) @ 25°C 21ns/110ns
Test Condition 300V, 10A, 27Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package Die
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