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onsemi HGTD1N120BNS9A

Part No.:
HGTD1N120BNS9A
Manufacturer:
onsemi
Category:
Single IGBTs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Description:
IGBT NPT 1200V 5.3A TO252AA
Quantity:

Unit Price:$0

Ext Price:$0

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HGTD1N120BNS9A Information

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Manufacturer:
onsemi
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
IGBT Type:
NPT
Voltage - Collector Emitter Breakdown (Max):
1200 V
Current - Collector (Ic) (Max):
5.3 A
Current - Collector Pulsed (Icm):
6 A
Vce(on) (Max) @ Vge, Ic:
2.9V @ 15V, 1A
Power - Max:
60 W
Switching Energy:
70µJ (on), 90µJ (off)
Input Type:
Standard
Gate Charge:
14 nC
Td (on/off) @ 25°C:
15ns/67ns
Test Condition:
960V, 1A, 82Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA
Image HGTD1N120BNS9A
Part Number HGTD1N120BNS9A
Manufacturer onsemi
Series -
Package/Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging Tape & Reel (TR)
Product Status Active
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 5.3 A
Current - Collector Pulsed (Icm) 6 A
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 1A
Power - Max 60 W
Switching Energy 70µJ (on), 90µJ (off)
Input Type Standard
Gate Charge 14 nC
Td (on/off) @ 25°C 15ns/67ns
Test Condition 960V, 1A, 82Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-252AA
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