Vishay Siliconix SI8481DB-T1-E1

Product attributes

Attribute value

Manufacturer:

Vishay Siliconix

Series:

TrenchFET® Gen III

Package/Case:

4-UFBGA

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20 V

Current - Continuous Drain (Id) @ 25°C:

9.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

1.8V, 4.5V

Rds On (Max) @ Id, Vgs:

21mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id:

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

47 nC @ 4.5 V

Vgs (Max):

±8V

Input Capacitance (Ciss) (Max) @ Vds:

2500 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

2.8W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

4-MICRO FOOT® (1.6x1.6)