Vishay Siliconix SI6463BDQ-T1-E3

Product attributes

Attribute value

Manufacturer:

Vishay Siliconix

Series:

TrenchFET®

Package/Case:

8-TSSOP (0.173", 4.40mm Width)

Packaging:

Cut Tape (CT)

Product Status:

Obsolete

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20 V

Current - Continuous Drain (Id) @ 25°C:

6.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

15mOhm @ 7.4A, 4.5V

Vgs(th) (Max) @ Id:

800mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

60 nC @ 5 V

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-TSSOP