Vishay Siliconix SI3529DV-T1-GE3

Product attributes

Attribute value

Manufacturer:

Vishay Siliconix

Series:

TrenchFET®

Package/Case:

SOT-23-6 Thin, TSOT-23-6

Packaging:

Tape & Reel (TR)

Product Status:

Obsolete

Technology:

MOSFET (Metal Oxide)

Configuration:

N and P-Channel

FET Feature:

Logic Level Gate

Drain to Source Voltage (Vdss):

40V

Current - Continuous Drain (Id) @ 25°C:

2.5A, 1.95A

Rds On (Max) @ Id, Vgs:

125mOhm @ 2.2A, 10V

Vgs(th) (Max) @ Id:

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

7nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

205pF @ 20V

Power - Max:

1.4W

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

6-TSOP