UMW SI2318A

Product attributes

Attribute value

Manufacturer:

UMW

Series:

UMW

Package/Case:

TO-236-3, SC-59, SOT-23-3

Packaging:

Cut Tape (CT)

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40 V

Current - Continuous Drain (Id) @ 25°C:

4.3A (Ta), 5.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

42mOhm @ 4.3A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

9 nC @ 20 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

340 pF @ 20 V

FET Feature:

-

Power Dissipation (Max):

1.25W (Ta), 2.1W (Tc)

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-23