Vishay Siliconix SI2309DS-T1-E3

Product attributes

Attribute value

Manufacturer:

Vishay Siliconix

Series:

TrenchFET®

Package/Case:

TO-236-3, SC-59, SOT-23-3

Packaging:

Tape & Reel (TR)

Product Status:

Obsolete

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60 V

Current - Continuous Drain (Id) @ 25°C:

1.25A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

340mOhm @ 1.25A, 10V

Vgs(th) (Max) @ Id:

1V @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:

12 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

1.25W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-23-3 (TO-236)