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Infineon Technologies SGB15N120ATMA1

Part No.:
SGB15N120ATMA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Description:
IGBT 1200V 30A 198W TO263-3
Quantity:

Unit Price:$0

Ext Price:$0

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SGB15N120ATMA1 Information

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Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
IGBT Type:
NPT
Voltage - Collector Emitter Breakdown (Max):
1200 V
Current - Collector (Ic) (Max):
30 A
Current - Collector Pulsed (Icm):
52 A
Vce(on) (Max) @ Vge, Ic:
3.6V @ 15V, 15A
Power - Max:
198 W
Switching Energy:
1.9mJ
Input Type:
Standard
Gate Charge:
130 nC
Td (on/off) @ 25°C:
18ns/580ns
Test Condition:
800V, 15A, 33Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-3-2
Image SGB15N120ATMA1
Part Number SGB15N120ATMA1
Manufacturer Infineon Technologies
Series -
Package/Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging Tape & Reel (TR)
Product Status Obsolete
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 30 A
Current - Collector Pulsed (Icm) 52 A
Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 15A
Power - Max 198 W
Switching Energy 1.9mJ
Input Type Standard
Gate Charge 130 nC
Td (on/off) @ 25°C 18ns/580ns
Test Condition 800V, 15A, 33Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
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