Rohm Semiconductor SCT2280KEGC11

Product attributes

Attribute value

Manufacturer:

Rohm Semiconductor

Series:

-

Package/Case:

TO-247-3

Packaging:

Tube

Product Status:

Active

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

18V

Rds On (Max) @ Id, Vgs:

364mOhm @ 4A, 18V

Vgs(th) (Max) @ Id:

4V @ 1.4mA

Gate Charge (Qg) (Max) @ Vgs:

36 nC @ 18 V

Vgs (Max):

+22V, -6V

Input Capacitance (Ciss) (Max) @ Vds:

667 pF @ 800 V

FET Feature:

-

Power Dissipation (Max):

108W (Tc)

Operating Temperature:

175°C

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-247N