Rohm Semiconductor RV4E031RPHZGTCR1

Product attributes

Attribute value

Manufacturer:

Rohm Semiconductor

Series:

-

Package/Case:

6-PowerWFDFN

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30 V

Current - Continuous Drain (Id) @ 25°C:

3.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

105mOhm @ 3.1A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

4.8 nC @ 5 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

460 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

1.5W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

Automotive

Qualification:

AEC-Q101

Mounting Type:

Surface Mount, Wettable Flank

Supplier Device Package:

DFN1616-6W