Rohm Semiconductor RQ6E055BNTCR

Product attributes

Attribute value

Manufacturer:

Rohm Semiconductor

Series:

-

Package/Case:

SOT-23-6 Thin, TSOT-23-6

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30 V

Current - Continuous Drain (Id) @ 25°C:

5.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

25mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

8.6 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

355 pF @ 15 V

FET Feature:

-

Power Dissipation (Max):

1.25W (Ta)

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

TSMT6 (SC-95)