Harris Corporation RFW2N06RLE

Product attributes

Attribute value

Manufacturer:

Harris Corporation

Series:

-

Package/Case:

4-DIP (0.300", 7.62mm)

Packaging:

Bulk

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60 V

Current - Continuous Drain (Id) @ 25°C:

2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

5V

Rds On (Max) @ Id, Vgs:

200mOhm @ 2A, 5V

Vgs(th) (Max) @ Id:

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

30 nC @ 10 V

Vgs (Max):

+10V, -5V

Input Capacitance (Ciss) (Max) @ Vds:

535 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

1.09W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

4-DIP, Hexdip