onsemi RFP4N100

Product attributes

Attribute value

Manufacturer:

onsemi

Series:

-

Package/Case:

TO-220-3

Packaging:

Tube

Product Status:

Obsolete

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

1000 V

Current - Continuous Drain (Id) @ 25°C:

4.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

3.5Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

120 nC @ 20 V

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-220-3