Harris Corporation RFD4N06L

Product attributes

Attribute value

Manufacturer:

Harris Corporation

Series:

-

Package/Case:

TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:

Bulk

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60 V

Current - Continuous Drain (Id) @ 25°C:

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

5V

Rds On (Max) @ Id, Vgs:

600mOhm @ 1A, 5V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

8 nC @ 10 V

Vgs (Max):

±10V

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

30W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

IPAK