Rohm Semiconductor RCD100N19TL

Product attributes

Attribute value

Manufacturer:

Rohm Semiconductor

Series:

-

Package/Case:

TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:

Tape & Reel (TR)

Product Status:

Last Time Buy

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

190 V

Current - Continuous Drain (Id) @ 25°C:

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4V, 10V

Rds On (Max) @ Id, Vgs:

182mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

52 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

2000 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

850mW (Ta), 20W (Tc)

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

CPT3