Rohm Semiconductor R6009JNXC7G

Product attributes

Attribute value

Manufacturer:

Rohm Semiconductor

Series:

-

Package/Case:

TO-220-3 Full Pack

Packaging:

Tube

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

600 V

Current - Continuous Drain (Id) @ 25°C:

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

15V

Rds On (Max) @ Id, Vgs:

585mOhm @ 4.5A, 15V

Vgs(th) (Max) @ Id:

7V @ 1.38mA

Gate Charge (Qg) (Max) @ Vgs:

22 nC @ 15 V

Vgs (Max):

±30V

Input Capacitance (Ciss) (Max) @ Vds:

645 pF @ 100 V

FET Feature:

-

Power Dissipation (Max):

53W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-220FM