NXP USA Inc. PSMN8R5-108ESQ

Product attributes

Attribute value

Manufacturer:

NXP USA Inc.

Series:

-

Package/Case:

TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:

Tube

Product Status:

Obsolete

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

108 V

Current - Continuous Drain (Id) @ 25°C:

100A (Tj)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

8.5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

111 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

5512 pF @ 50 V

FET Feature:

-

Power Dissipation (Max):

263W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

I2PAK