NXP USA Inc. PSMN3R7-25YLC,115

Product attributes

Attribute value

Manufacturer:

NXP USA Inc.

Series:

-

Package/Case:

SC-100, SOT-669

Packaging:

Tape & Reel (TR)

Product Status:

Obsolete

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

25 V

Current - Continuous Drain (Id) @ 25°C:

97A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

3.9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:

1.95V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

21.6 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

1585 pF @ 12 V

FET Feature:

-

Power Dissipation (Max):

64W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

LFPAK56, Power-SO8