NXP USA Inc. PSMN2R6-60PSQ

Product attributes

Attribute value

Manufacturer:

NXP USA Inc.

Series:

-

Package/Case:

TO-220-3

Packaging:

Bulk

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60 V

Current - Continuous Drain (Id) @ 25°C:

150A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

2.6mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

140 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

7629 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

326W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB