NXP Semiconductors PQMH9Z

Product attributes

Attribute value

Manufacturer:

NXP Semiconductors

Series:

-

Package/Case:

6-XFDFN Exposed Pad

Packaging:

Bulk

Product Status:

Active

Transistor Type:

2 NPN - Pre-Biased

Current - Collector (Ic) (Max):

100mA

Voltage - Collector Emitter Breakdown (Max):

50V

Resistor - Base (R1):

10kOhms

Resistor - Emitter Base (R2):

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce:

100 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic:

100mV @ 250µA, 5mA

Current - Collector Cutoff (Max):

1µA

Frequency - Transition:

230MHz

Power - Max:

230mW

Grade:

Automotive

Qualification:

AEC-Q101

Mounting Type:

Surface Mount

Supplier Device Package:

DFN1010B-6