NXP Semiconductors PMPB95ENEA/FX

Product attributes

Attribute value

Manufacturer:

NXP Semiconductors

Series:

-

Package/Case:

6-UDFN Exposed Pad

Packaging:

Bulk

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

80 V

Current - Continuous Drain (Id) @ 25°C:

4.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

105mOhm @ 2.8A, 10V

Vgs(th) (Max) @ Id:

2.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

14.9 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

504 pF @ 40 V

FET Feature:

-

Power Dissipation (Max):

1.6W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

Automotive

Qualification:

AEC-Q101

Mounting Type:

Surface Mount

Supplier Device Package:

DFN2020MD-6