NXP Semiconductors PMPB23XNEZ

Product attributes

Attribute value

Manufacturer:

NXP Semiconductors

Series:

-

Package/Case:

6-UDFN Exposed Pad

Packaging:

Bulk

Product Status:

Obsolete

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20 V

Current - Continuous Drain (Id) @ 25°C:

7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

1.8V, 4.5V

Rds On (Max) @ Id, Vgs:

22mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id:

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

17 nC @ 4.5 V

Vgs (Max):

±12V

Input Capacitance (Ciss) (Max) @ Vds:

1136 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

1.7W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

DFN2020MD-6