Nexperia USA Inc. PMPB12R5EPX

Product attributes

Attribute value

Manufacturer:

Nexperia USA Inc.

Series:

TrenchMOS™

Package/Case:

6-UDFN Exposed Pad

Packaging:

Tape & Reel (TR)

Product Status:

Obsolete

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30 V

Current - Continuous Drain (Id) @ 25°C:

8.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

15mOhm @ 8.8A, 10V

Vgs(th) (Max) @ Id:

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

44 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

1392 pF @ 15 V

FET Feature:

-

Power Dissipation (Max):

1.9W (Ta), 12.5W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

DFN2020M-6