Nexperia USA Inc. PMPB11R2VPX

Product attributes

Attribute value

Manufacturer:

Nexperia USA Inc.

Series:

TrenchMOS™

Package/Case:

6-UDFN Exposed Pad

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

12 V

Current - Continuous Drain (Id) @ 25°C:

9.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

14mOhm @ 9.7A, 4.5V

Vgs(th) (Max) @ Id:

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

39 nC @ 4.5 V

Vgs (Max):

±8V

Input Capacitance (Ciss) (Max) @ Vds:

2230 pF @ 6 V

FET Feature:

-

Power Dissipation (Max):

1.9W (Ta), 12.5W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

DFN2020MD-6