NXP USA Inc. PMG85XP,115

Product attributes

Attribute value

Manufacturer:

NXP USA Inc.

Series:

-

Package/Case:

6-TSSOP, SC-88, SOT-363

Packaging:

Bulk

Product Status:

Active

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20 V

Current - Continuous Drain (Id) @ 25°C:

2A (Tj)

Drive Voltage (Max Rds On, Min Rds On):

2.5V, 4.5V

Rds On (Max) @ Id, Vgs:

115mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id:

1.15V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

7.2 nC @ 4.5 V

Vgs (Max):

±12V

Input Capacitance (Ciss) (Max) @ Vds:

560 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

375mW (Ta), 2.4W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

6-TSSOP