NXP USA Inc. PHT6N06LT,135

Product attributes

Attribute value

Manufacturer:

NXP USA Inc.

Series:

TrenchMOS™

Package/Case:

TO-261-4, TO-261AA

Packaging:

Tape & Reel (TR)

Product Status:

Obsolete

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

55 V

Current - Continuous Drain (Id) @ 25°C:

2.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

5V

Rds On (Max) @ Id, Vgs:

150mOhm @ 5A, 5V

Vgs(th) (Max) @ Id:

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

4.5 nC @ 5 V

Vgs (Max):

±13V

Input Capacitance (Ciss) (Max) @ Vds:

330 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

1.8W (Ta), 8.3W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

SC-73