Nexperia USA Inc. PHK04P02T,518

Product attributes

Attribute value

Manufacturer:

Nexperia USA Inc.

Series:

-

Package/Case:

8-SOIC (0.154", 3.90mm Width)

Packaging:

Bulk

Product Status:

Active

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

16 V

Current - Continuous Drain (Id) @ 25°C:

4.66A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

2.5V, 10V

Rds On (Max) @ Id, Vgs:

120mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id:

600mV @ 1mA (Typ)

Gate Charge (Qg) (Max) @ Vgs:

7.2 nC @ 4.5 V

Vgs (Max):

±8V

Input Capacitance (Ciss) (Max) @ Vds:

528 pF @ 12.8 V

FET Feature:

-

Power Dissipation (Max):

5W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-SO