Nexperia USA Inc. PHD38N02LT,118

Product attributes

Attribute value

Manufacturer:

Nexperia USA Inc.

Series:

TrenchMOS™

Package/Case:

TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:

Tape & Reel (TR)

Product Status:

Obsolete

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20 V

Current - Continuous Drain (Id) @ 25°C:

44.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

5V

Rds On (Max) @ Id, Vgs:

16mOhm @ 25A, 5V

Vgs(th) (Max) @ Id:

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

15.1 nC @ 5 V

Vgs (Max):

±12V

Input Capacitance (Ciss) (Max) @ Vds:

800 pF @ 20 V

FET Feature:

-

Power Dissipation (Max):

57.6W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

DPAK