NXP Semiconductors PH3120L,115

Product attributes

Attribute value

Manufacturer:

NXP Semiconductors

Series:

TrenchMOS™

Package/Case:

SC-100, SOT-669

Packaging:

Bulk

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20 V

Current - Continuous Drain (Id) @ 25°C:

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

2.65mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

48.5 nC @ 4.5 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

4457 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

62.5W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

LFPAK56, Power-SO8