Nexperia USA Inc. PDTA123YQBZ

Product attributes

Attribute value

Manufacturer:

Nexperia USA Inc.

Series:

-

Package/Case:

3-XDFN Exposed Pad

Packaging:

Tape & Reel (TR)

Product Status:

Active

Transistor Type:

PNP - Pre-Biased

Current - Collector (Ic) (Max):

100 mA

Voltage - Collector Emitter Breakdown (Max):

50 V

Resistor - Base (R1):

2.2 kOhms

Resistor - Emitter Base (R2):

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce:

35 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic:

150mV @ 500µA, 10mA

Current - Collector Cutoff (Max):

100nA

Frequency - Transition:

180 MHz

Power - Max:

340 mW

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount, Wettable Flank

Supplier Device Package:

DFN1110D-3