NXP USA Inc. PDTA115EMB,315

Product attributes

Attribute value

Manufacturer:

NXP USA Inc.

Series:

-

Package/Case:

SC-101, SOT-883

Packaging:

Bulk

Product Status:

Active

Transistor Type:

PNP - Pre-Biased

Current - Collector (Ic) (Max):

20 mA

Voltage - Collector Emitter Breakdown (Max):

50 V

Resistor - Base (R1):

100 kOhms

Resistor - Emitter Base (R2):

100 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce:

80 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic:

150mV @ 250µA, 5mA

Current - Collector Cutoff (Max):

1µA

Frequency - Transition:

180 MHz

Power - Max:

250 mW

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

DFN1006B-3