NXP Semiconductors PBSS4260QAZ

Product attributes

Attribute value

Manufacturer:

NXP Semiconductors

Series:

-

Package/Case:

3-XDFN Exposed Pad

Packaging:

Bulk

Product Status:

Active

Transistor Type:

NPN

Current - Collector (Ic) (Max):

2 A

Voltage - Collector Emitter Breakdown (Max):

60 V

Vce Saturation (Max) @ Ib, Ic:

190mV @ 50mA, 1A

Current - Collector Cutoff (Max):

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:

40 @ 2A, 2V

Power - Max:

325 mW

Frequency - Transition:

180MHz

Operating Temperature:

150°C (TJ)

Grade:

Automotive

Qualification:

AEC-Q100

Mounting Type:

Surface Mount

Supplier Device Package:

DFN1010D-3