onsemi NVMYS021N10MCLTWG

Product attributes

Attribute value

Manufacturer:

onsemi

Series:

-

Package/Case:

SOT-1023, 4-LFPAK

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

8.4A (Ta), 31A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

23mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:

3V @ 42µA

Gate Charge (Qg) (Max) @ Vgs:

13 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

850 pF @ 50 V

FET Feature:

-

Power Dissipation (Max):

3.6W (Ta), 49W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

Automotive

Qualification:

AEC-Q101

Mounting Type:

Surface Mount

Supplier Device Package:

LFPAK4 (5x6)