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onsemi NTHL1000N170M1

Part No.:
NTHL1000N170M1
Manufacturer:
onsemi
Category:
Single FETs, MOSFETs
Package:
TO-247-3
Description:
SILICON CARBIDE (SIC) MOSFET EL
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Unit Price:$0

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NTHL1000N170M1 Information

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Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):
1700 V
Current - Continuous Drain (Id) @ 25°C:
4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
20V
Rds On (Max) @ Id, Vgs:
1.43Ohm @ 2A, 20V
Vgs(th) (Max) @ Id:
4.3V @ 640µA
Gate Charge (Qg) (Max) @ Vgs:
14 nC @ 20 V
Vgs (Max):
+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds:
150 pF @ 1000 V
FET Feature:
-
Power Dissipation (Max):
48W
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-3
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