onsemi NTHL1000N170M1

Product attributes

Attribute value

Manufacturer:

onsemi

Series:

-

Package/Case:

TO-247-3

Packaging:

Tube

Product Status:

Active

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

1700 V

Current - Continuous Drain (Id) @ 25°C:

4.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

20V

Rds On (Max) @ Id, Vgs:

1.43Ohm @ 2A, 20V

Vgs(th) (Max) @ Id:

4.3V @ 640µA

Gate Charge (Qg) (Max) @ Vgs:

14 nC @ 20 V

Vgs (Max):

+25V, -15V

Input Capacitance (Ciss) (Max) @ Vds:

150 pF @ 1000 V

FET Feature:

-

Power Dissipation (Max):

48W

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-247-3