Renesas Electronics Corporation NP32N055SHE-E1-AY

Product attributes

Attribute value

Manufacturer:

Renesas Electronics Corporation

Series:

-

Package/Case:

TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:

Bulk

Product Status:

Obsolete

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

55 V

Current - Continuous Drain (Id) @ 25°C:

32A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

25mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

32 nC @ 10 V

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

1600 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

1.2W (Ta), 66W (Tc)

Operating Temperature:

175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

TO-252 (MP-3ZK)