NextGen Components NC2M120C20HTNG

Product attributes

Attribute value

Manufacturer:

NextGen Components

Series:

NC2M

Package/Case:

TO-247-4

Packaging:

Tube

Product Status:

Active

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

1.2 kV

Current - Continuous Drain (Id) @ 25°C:

126A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

30mOhm @ 63A, 20V

Vgs(th) (Max) @ Id:

4.5V @ 20mA

Gate Charge (Qg) (Max) @ Vgs:

282 nC @ 20 V

Vgs (Max):

+20V, -5V

Input Capacitance (Ciss) (Max) @ Vds:

4615 pF @ 1 kV

FET Feature:

-

Power Dissipation (Max):

625W (Ta)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-247-4L