NextGen Components NC1M120C35HTNG

Product attributes

Attribute value

Manufacturer:

NextGen Components

Series:

NC1M

Package/Case:

TO-247-4

Packaging:

Tube

Product Status:

Active

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

1.2 kV

Current - Continuous Drain (Id) @ 25°C:

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

50mOhm @ 33.3A, 18V

Vgs(th) (Max) @ Id:

4.5V @ 15mA

Gate Charge (Qg) (Max) @ Vgs:

190 nC @ 18 V

Vgs (Max):

+18V, -5V

Input Capacitance (Ciss) (Max) @ Vds:

2834 pF @ 1 kV

FET Feature:

-

Power Dissipation (Max):

386W (Ta)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-247-4L