GeneSiC Semiconductor MURT20060R

Product attributes

Attribute value

Manufacturer:

GeneSiC Semiconductor

Series:

-

Package/Case:

Three Tower

Packaging:

Bulk

Product Status:

Active

Diode Configuration:

1 Pair Common Anode

Technology:

Standard

Voltage - DC Reverse (Vr) (Max):

600 V

Current - Average Rectified (Io) (per Diode):

100A

Voltage - Forward (Vf) (Max) @ If:

1.7 V @ 100 A

Speed:

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr):

160 ns

Current - Reverse Leakage @ Vr:

25 µA @ 50 V

Operating Temperature - Junction:

-55°C ~ 150°C

Grade:

-

Qualification:

-

Mounting Type:

Chassis Mount

Supplier Device Package:

Three Tower