Microchip Technology MSCSM170HRM11NG

Product attributes

Attribute value

Manufacturer:

Microchip Technology

Series:

-

Package/Case:

Module

Packaging:

Bulk

Product Status:

Active

Technology:

Silicon Carbide (SiC)

Configuration:

4 N-Channel (Three Level Inverter)

FET Feature:

-

Drain to Source Voltage (Vdss):

1700V (1.7kV), 1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:

226A (Tc), 163A (Tc)

Rds On (Max) @ Id, Vgs:

11.3mOhm @ 120A, 20V, 16mOhm @ 80A, 20V

Vgs(th) (Max) @ Id:

3.2V @ 10mA, 2.8V @ 6mA

Gate Charge (Qg) (Max) @ Vgs:

712nC @ 20V, 464nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds:

13200pF @ 1000V, 6040pF @ 1000V

Power - Max:

1.012kW (Tc), 662W (Tc)

Operating Temperature:

-40°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Chassis Mount

Supplier Device Package:

-