Microchip Technology MSCSM120HRM08NG

Product attributes

Attribute value

Manufacturer:

Microchip Technology

Series:

-

Package/Case:

Module

Packaging:

Bulk

Product Status:

Active

Technology:

Silicon Carbide (SiC)

Configuration:

4 N-Channel (Three Level Inverter)

FET Feature:

-

Drain to Source Voltage (Vdss):

1200V (1.2kV), 700V

Current - Continuous Drain (Id) @ 25°C:

317A (Tc), 227A (Tc)

Rds On (Max) @ Id, Vgs:

7.8mOhm @ 160A, 20V, 9.5mOhm @ 80A, 20V

Vgs(th) (Max) @ Id:

2.8V @ 12mA, 2.4V @ 8mA

Gate Charge (Qg) (Max) @ Vgs:

928nC @ 20V, 430nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds:

12100pF @ 1000V, 9000pF @ 700V

Power - Max:

1.253kW (Tc), 613W (Tc)

Operating Temperature:

-40°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Chassis Mount

Supplier Device Package:

-