Microchip Technology MSC017SMA120J

Product attributes

Attribute value

Manufacturer:

Microchip Technology

Series:

-

Package/Case:

-

Packaging:

Bulk

Product Status:

Active

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

88A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

20V

Rds On (Max) @ Id, Vgs:

22mOhm @ 40A, 20V

Vgs(th) (Max) @ Id:

2.7V @ 4.5mA (Typ)

Gate Charge (Qg) (Max) @ Vgs:

249 nC @ 20 V

Vgs (Max):

+23V, -10V

Input Capacitance (Ciss) (Max) @ Vds:

5280 pF @ 1000 V

FET Feature:

-

Power Dissipation (Max):

278W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

-

Supplier Device Package:

SOT-227