GeneSiC Semiconductor MBR60035CTR

Product attributes

Attribute value

Manufacturer:

GeneSiC Semiconductor

Series:

-

Package/Case:

Twin Tower

Packaging:

Bulk

Product Status:

Active

Diode Configuration:

1 Pair Common Anode

Technology:

Schottky

Voltage - DC Reverse (Vr) (Max):

35 V

Current - Average Rectified (Io) (per Diode):

300A

Voltage - Forward (Vf) (Max) @ If:

750 mV @ 300 A

Speed:

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr):

-

Current - Reverse Leakage @ Vr:

1 mA @ 20 V

Operating Temperature - Junction:

-55°C ~ 150°C

Grade:

-

Qualification:

-

Mounting Type:

Chassis Mount

Supplier Device Package:

Twin Tower