Microchip Technology LND150N3-G-P013

Product attributes

Attribute value

Manufacturer:

Microchip Technology

Series:

-

Package/Case:

TO-226-3, TO-92-3 (TO-226AA)

Packaging:

Tape & Box (TB)

Product Status:

Active

FET Type:

N-Channel, Depletion Mode

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

500 V

Current - Continuous Drain (Id) @ 25°C:

30mA (Tj)

Drive Voltage (Max Rds On, Min Rds On):

0V

Rds On (Max) @ Id, Vgs:

1000Ohm @ 500µA, 0V

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

10 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

740mW (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-92-3