Microsemi Corporation JAN2N6770

Product attributes

Attribute value

Manufacturer:

Microsemi Corporation

Series:

-

Package/Case:

TO-204AE

Packaging:

Bulk

Product Status:

Obsolete

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

500 V

Current - Continuous Drain (Id) @ 25°C:

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

500mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

120 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

4W (Ta), 150W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

Military

Qualification:

MIL-PRF-19500/543

Mounting Type:

Through Hole

Supplier Device Package:

TO-204AE (TO-3)