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Inventchip IV1D12015T2

Part No.:
IV1D12015T2
Manufacturer:
Inventchip
Category:
Single Diodes
Package:
TO-247-2
Description:
DIODE SIL CARB 1.2KV 44A TO247-2
Quantity:

Unit Price:$0

Ext Price:$0

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IV1D12015T2 Information

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Product attributes
Attribute value
Manufacturer:
Inventchip
Series:
-
Package/Case:
TO-247-2
Packaging:
Tube
Product Status:
Active
Technology:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
44A
Voltage - Forward (Vf) (Max) @ If:
1.8 V @ 15 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
80 µA @ 1200 V
Capacitance @ Vr, F:
888pF @ 1V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-2
Operating Temperature - Junction:
-55°C ~ 175°C
Image IV1D12015T2
Part Number IV1D12015T2
Manufacturer Inventchip
Series -
Package/Case TO-247-2
Packaging Tube
Product Status Active
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 44A
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 15 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 80 µA @ 1200 V
Capacitance @ Vr, F 888pF @ 1V, 1MHz
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-2
Operating Temperature - Junction -55°C ~ 175°C
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