Infineon Technologies ISG0613N04NM6HSCATMA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

OptiMOS™ 6

Package/Case:

10-PowerWDFN

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

2 N-Channel (Half Bridge)

FET Feature:

-

Drain to Source Voltage (Vdss):

40V

Current - Continuous Drain (Id) @ 25°C:

42A (Ta), 299A (Tc)

Rds On (Max) @ Id, Vgs:

0.88mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:

2.8V @ 780µA

Gate Charge (Qg) (Max) @ Vgs:

104nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

6200pF @ 20V

Power - Max:

3W (Ta), 167W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

PG-WHITFN-10-1