Infineon Technologies IRL3102S

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

HEXFET®

Package/Case:

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:

Tube

Product Status:

Obsolete

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20 V

Current - Continuous Drain (Id) @ 25°C:

61A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 7V

Rds On (Max) @ Id, Vgs:

13mOhm @ 37A, 7V

Vgs(th) (Max) @ Id:

700mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:

58 nC @ 4.5 V

Vgs (Max):

±10V

Input Capacitance (Ciss) (Max) @ Vds:

2500 pF @ 15 V

FET Feature:

-

Power Dissipation (Max):

89W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

D2PAK