Infineon Technologies IRFHM8326TRPBFXTMA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

HEXFET®

Package/Case:

8-WDFN Exposed Pad

Packaging:

Tape & Reel (TR)

Product Status:

Last Time Buy

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30 V

Current - Continuous Drain (Id) @ 25°C:

19A (Ta), 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

4.7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:

2.2V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:

39 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

2496 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

2.8W (Ta), 37W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-PQFN (3.1x3.1)