Infineon Technologies IRFH5220TRPBF

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

HEXFET®

Package/Case:

8-VQFN Exposed Pad

Packaging:

Tape & Reel (TR)

Product Status:

Obsolete

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

200 V

Current - Continuous Drain (Id) @ 25°C:

3.8A (Ta), 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

99.9mOhm @ 5.8A, 10V

Vgs(th) (Max) @ Id:

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:

30 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

1380 pF @ 50 V

FET Feature:

-

Power Dissipation (Max):

3.6W (Ta), 8.3W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

PQFN (5x6)